STP601D p channel enhancement mode mosfet - 30 a stanson technology 120 bentl ey square, mountain view, ca 94040 usa www.stansontech.com copyright ? 200 9 , stanson corp. STP601D 2009. v1 description st p6 01 d is the p - channel logic enhancement mode power field effect transistor which is produced using high cell density, dmos trench technology. the st p 6 01 d has been designed specially to improve the overall efficiency of dc/dc converters usin g either synchronous or conventional switching pwm controllers. it has been optimized for low gate charge, low r ds(on) and fast switching speed. pin configuration part marking y: year code a: date code b: package code c: process code
STP601D p channel enhancement mode mosfet - 30 a stanson technology 120 bentl ey square, mountain view, ca 94040 usa www.stansontech.com copyright ? 200 9 , stanson corp. STP601D 2009. v1 absoulte maximum ratings (ta = 25 unless otherwise noted ) parameter symbol typical unit drain - source voltage vdss - 6 0 v gate - source voltage vgss ?0 v continuous drain current (tj=150 ) ta=25 ta= 75 id - 30 .0 - 20 . 0 a pulsed drain current idm - 8 0 a continuous source current (diode conduction) is - 30 a power dissipation ta=25 pd 6 0 w operation junction temperature tj 150 storgae temperature range tstg - 55/150 thermal resistance - junction to ambient r ja 50 /w
STP601D p channel enhancement mode mosfet - 30 a stanson technology 120 bentl ey square, mountain view, ca 94040 usa www.stansontech.com copyright ? 200 9 , stanson corp. STP601D 2009. v1 electrical characteristics ( ta = 25 unless otherwise noted ) parameter symbol condition min typ max uni t static drain - source breakdown voltage v (br)dss v gs =0v,id= - 250u a - 6 0 v gate threshold voltage v gs(th) v ds =v gs ,id= - 2 50ua - 1. 0 - 2.5 v gate leakage current i gss v ds =0v,v gs =?0v ?00 na zero gate voltage drain current i dss v ds = - 60 v,v gs =0v - 1 ua v ds = - 60 v,v gs =0v t j = 55 - 5 drain - source on - resistance r ds(on) v gs = - 10v,i d = - 20 a v gs = - 4.5 v,i d = - 20 a 2 2 28 30 35 m forward transconductance gfs v ds = - 5 0 v,i d = - 7.8 a 3 2 s diode forward voltage v sd i s = - 1.0 a,v gs =0v - 1 v dynamic total gate charge q g v ds = - 3 0 v,v g s = - 1 0 v i d = - 20 a 45 58 nc gate - source cha rge q gs 23 gate - drain charge q gd 10 input capacitance c iss v ds = - 30 v,v g s =0v f=1mhz 3000 3600 pf output capacitance c oss 2 4 0 reverse transfer c apacitance c rss 1 53 turn - on time t d(on) tr v gs = - 10 v,v d s = - 3 0 v r d = 3 ,r g = 1.5 1 2 ns 15 turn - off time t d(off) tf 38 15
STP601D p channel enhancement mode mosfet - 30 a stanson technology 120 bentl ey square, mountain view, ca 94040 usa www.stansontech.com copyright ? 200 9 , stanson corp. STP601D 2009. v1 typical characterictics
STP601D p channel enhancement mode mosfet - 30 a stanson technology 120 bentl ey square, mountain view, ca 94040 usa www.stansontech.com copyright ? 200 9 , stanson corp. STP601D 2009. v1 typical characterictics
STP601D p channel enhancement mode mosfet - 30 a stanson technology 120 bentl ey square, mountain view, ca 94040 usa www.stansontech.com copyright ? 200 9 , stanson corp. STP601D 2009. v1 typical characterictics
STP601D p channel enhancement mode mosfet - 30 a stanson technology 120 bentl ey square, mountain view, ca 94040 usa www.stansontech.com copyright ? 200 9 , stanson corp. STP601D 2009. v1 to - 252 - 2l package outline
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